The H014C11A from RFHIC is an RF GaN Transistor that operates from 1800 to 2200 MHz. It delivers a saturated output power of 398 W with a power gain of 13 dB and has a drain efficiency of 49%. This transistor is part of RFHIC’s OptiGaN product family that provides high-performance GaN of SiC tranistors at lower costs. It is available in a surface mount flange package that requires a DC supply of 48 V. This transistor can be used for 4G, 4G LTE, and Open RAN applications in WiMAX, LTE, WCDMA and GSM systems and high-efficiency Doherty amplifiers.
