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LET9120

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LET9120 Image

The LET9120 from STMicroelectronics is a RF Transistor with Frequency DC to 860 MHz, Power 51.76 dBm, Power(W) 120 to 150 W, Power Gain (Gp) 16 to 18 dB, Efficiency 60 to 70%. More details for LET9120 can be seen below.

Product Specifications

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Product Details

  • Part Number
    LET9120
  • Manufacturer
    STMicroelectronics
  • Description
    150 W, LDMOS / MOSFET RF Transistor from DC to 860 MHz

General Parameters

  • Transistor Type
    LDMOS
  • Technology
    Si
  • Application Industry
    Commercial, Wireless Infrastructure
  • Application
    Commercial, Industrial
  • CW/Pulse
    CW
  • Frequency
    DC to 860 MHz
  • Power
    51.76 dBm
  • Power(W)
    120 to 150 W
  • Power Gain (Gp)
    16 to 18 dB
  • Efficiency
    60 to 70%
  • VSWR
    20.00:1
  • Supply Voltage
    28 to 32 V
  • Breakdown Voltage - Drain-Source
    80 V
  • Voltage - Drain-Source (Vdss)
    80 V
  • Voltage - Gate-Source (Vgs)
    -0.5 to 15 V
  • Current
    400 mA
  • Drain Current
    18 A
  • Drain Leakage Current (Id)
    1 uA
  • Gate Leakage Current (Ig)
    1 uA
  • Power Dissipation (Pdiss)
    200 W
  • Feedback Capacitance
    0.7 pF
  • Input Capacitance
    58 pF
  • Junction Temperature (Tj)
    200 Degree C
  • Output Capacitance
    30 pF
  • Thermal Resistance
    0.65 Degree C/W
  • Grade
    Commercial
  • Storage Temperature
    -65 to 150 Degree C
  • Tags
    IDEV Series
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