1. everything RF
  2. RF Components
  3. Transistors
  4. Transistors
  5. STMicroelectronics
  6. RF2L42008CG2

RF2L42008CG2

Request Quote

Note : Your request will be directed to STMicroelectronics.

RF2L42008CG2 Image

The RF2L42008CG2 from STMicroelectronics is a RF Transistor with Frequency 700 to 4200 MHz, Power 39.03 dBm, Power(W) 8 W, Duty_Cycle 10%, Power Gain (Gp) 14.5 dB. Tags: Flanged. More details for RF2L42008CG2 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    RF2L42008CG2
  • Manufacturer
    STMicroelectronics
  • Description
    8 W, LDMOS RF Transistor from 700 to 4200 MHz

General Parameters

  • Transistor Type
    LDMOS
  • Technology
    Si
  • Application Industry
    Avionics, Radar, ISM, Wireless Infrastructure
  • Application
    Telecom, Communication System, Radar, Industrial, ISM Band
  • CW/Pulse
    Pulse
  • Frequency
    700 to 4200 MHz
  • Power
    39.03 dBm
  • Power(W)
    8 W
  • Pulsed Width
    100 µs
  • Duty_Cycle
    10%
  • Power Gain (Gp)
    14.5 dB
  • VSWR
    10.00:1
  • Supply Voltage
    28 V
  • Threshold Voltage
    1.75 to 2.50 V
  • Drain Gate Voltage
    1.75
  • Breakdown Voltage - Drain-Source
    65 V
  • Voltage - Drain-Source (Vdss)
    1.1 V
  • Drain Efficiency
    0.47
  • Drain Current
    2.5 A
  • Drain Bias Current
    2.5
  • Drain Leakage Current (Id)
    1 µA
  • Gate Leakage Current (Ig)
    ±100 nA
  • Junction Temperature (Tj)
    200 Degrees
  • On Resistance
    1.5 Ohms
  • Thermal Resistance
    3.6 Degree C/W
  • Package Type
    Flanged
  • Grade
    Commercial
  • Operating Temperature
    25 Degree C
  • Storage Temperature
    -65 to 150 Degree C
  • Tags
    IDEV Series
  • Note
    Gate quiescent voltage: 2 to 4 V
View details on the manufacturer's website
View similar products