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RF5L15120CB4

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The RF5L15120CB4 from STMicroelectronics is a RF Transistor with Frequency 1 to 1.5 GHz, Power 50.792 dBm, Power(W) 120 W, Power Gain (Gp) 20 dB, VSWR 10.00:1. Tags: Flanged. More details for RF5L15120CB4 can be seen below.

Product Specifications

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Product Details

  • Part Number
    RF5L15120CB4
  • Manufacturer
    STMicroelectronics
  • Description
    120 W, LDMOS RF Transistor from 1 to 1.5 GHz

General Parameters

  • Transistor Type
    LDMOS
  • Technology
    Si
  • Application Industry
    Avionics, Broadcast, Commercial, Wireless Infrastructure
  • Application
    Industrial
  • CW/Pulse
    CW, Pulse
  • Frequency
    1 to 1.5 GHz
  • Power
    50.792 dBm
  • Power(W)
    120 W
  • Power Gain (Gp)
    20 dB
  • VSWR
    10.00:1
  • Class
    Class AB, B
  • Supply Voltage
    50 V
  • Threshold Voltage
    2 to 2.8 V
  • Drain Gate Voltage
    2
  • Breakdown Voltage - Drain-Source
    95 V
  • Drain Efficiency
    0.6
  • Drain Bias Current
    2.8
  • Gate Leakage Current (Ig)
    1 uA
  • Feedback Capacitance
    0.6 pF
  • Input Capacitance
    56 pF
  • Junction Temperature (Tj)
    200 Degree C
  • Output Capacitance
    23 pF
  • Package Type
    Flanged
  • Grade
    Commercial
  • Storage Temperature
    -65 to 150 Degree C
  • Tags
    IDEV Series

Technical Documents
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