The EGN21C105I2D from Sumitomo Electric Device Innovations is a RF Transistor with Frequency 2.14 GHz, Power 47.3 dBm, Power(W) 53.7 W, Saturated Power 49.5 to 50.3 dBm, Power Gain (Gp) 17 to 18 dB. Tags: Flanged. More details for EGN21C105I2D can be seen below.