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EGN26C105I2D

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The EGN26C105I2D from Sumitomo Electric Device Innovations is a RF Transistor with Frequency 2.6 GHz, Power 47.3 dBm, Power(W) 53.7 W, Saturated Power 49.5 to 50.3 dBm, Power Gain (Gp) 16 to 17 dB. Tags: Flanged. More details for EGN26C105I2D can be seen below.

Product Specifications

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Product Details

  • Part Number
    EGN26C105I2D
  • Manufacturer
    Sumitomo Electric Device Innovations
  • Description
    GaN on SiC, GaN HEMT from 2.6 GHz

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC, GaN
  • Application Industry
    Wireless Infrastructure
  • Application Type
    L-Band
  • Application
    Base Station, 4G / LTE
  • Frequency
    2.6 GHz
  • Power
    47.3 dBm
  • Power(W)
    53.7 W
  • Saturated Power
    49.5 to 50.3 dBm
  • Power Gain (Gp)
    16 to 17 dB
  • Supply Voltage
    50 V
  • Voltage - Drain-Source (Vdss)
    50 V
  • Voltage - Gate-Source (Vgs)
    -15 V
  • Power Dissipation (Pdiss)
    97.8 W
  • Thermal Resistance
    2 to 2.3 Degree C/W
  • Package Type
    Flanged
  • RoHS
    Yes
  • Storage Temperature
    -65 to 175 Degree C
  • Note
    Forward Gate Current : 102 mA, Reverse Gate Current : -3.9 mA

Technical Documents
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