The EGN26C210I2D from Sumitomo Electric Device Innovations is a RF Transistor with Frequency 2.6 GHz, Power 50.5 dBm, Power(W) 112.2 W, Saturated Power 52 to 53 dBm, Power Gain (Gp) 15 to 16 dB. Tags: Flanged. More details for EGN26C210I2D can be seen below.