Fill one form and get quotes for cable assemblies from multiple manufacturers
Note : Your request will be directed to Sumitomo Electric Device Innovations.
The FHX35X from Sumitomo Electric Device Innovations is a RF Transistor with Frequency 12 GHz, Power 17 dBm, Power(W) 0 to 0.05 W, Gain 8.5 to 10 dB, Noise Figure 1.2 to 1.6 dB. Tags: Surface Mount. More details for FHX35X can be seen below.
110 W GaN Doherty Power Transistor from 3400 to 3800 MHz
400 W GaN Asymmetric Doherty Power Transistor from 1.8 to 2.2 GHz for Base Station Applications
300 W GaN-on-SiC HEMT Power Transistor from 2.4 to 2.5 GHz
Create an account on everything RF to get a range of benefits.
By creating an account with us you agree to our Terms of Service and acknowledge receipt of our Privacy Policy.
Login to everything RF to download datasheets, white papers and more content.
