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FLC097WF

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The FLC097WF from Sumitomo Electric Device Innovations is a RF Transistor with Frequency 6 GHz, Power 27.5 to 28.8 dBm, Power(W) 0.56 to 0.76 W, P1dB 27.5 to 28.8 dBm, Power Gain (Gp) 7.5 to 8.5 dB. Tags: Flanged. More details for FLC097WF can be seen below.

Product Specifications

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Product Details

  • Part Number
    FLC097WF
  • Manufacturer
    Sumitomo Electric Device Innovations
  • Description
    GaAs FET from 6 GHz

General Parameters

  • Transistor Type
    FET
  • Technology
    GaAs
  • Application Type
    C-Band, General Purpose
  • Application
    General Purpose
  • Frequency
    6 GHz
  • Power
    27.5 to 28.8 dBm
  • Power(W)
    0.56 to 0.76 W
  • P1dB
    27.5 to 28.8 dBm
  • Power Gain (Gp)
    7.5 to 8.5 dB
  • Power Added Effeciency
    0.35
  • Voltage - Gate-Source (Vgs)
    -5 V
  • Drain Current
    300 to 450 mA
  • Thermal Resistance
    25 to 36 Degree C/W
  • Package Type
    Flanged
  • Package
    WF
  • Storage Temperature
    -65 to 175 Degree C
  • Note
    Pinch Off Voltage : -3.5 to -1 V, Channel Temperature : 175 Degree C

Technical Documents
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