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FLM1414-15F

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The FLM1414-15F from Sumitomo Electric Device Innovations is a RF Transistor with Frequency 14.0 to 14.5 GHz, Power 41.5 to 42 dBm, Power(W) 14.13 to 15.85 W, P1dB 41.5 to 42 dBm, Power Gain (Gp) 5 to 6 dB. Tags: Flanged. More details for FLM1414-15F can be seen below.

Product Specifications

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Product Details

  • Part Number
    FLM1414-15F
  • Manufacturer
    Sumitomo Electric Device Innovations
  • Description
    GaAs FET from 14.0 to 14.5 GHz

General Parameters

  • Transistor Type
    FET
  • Technology
    GaAs
  • Application Type
    X-Band, Ku-Band
  • Application
    X Band, Ku Band
  • Frequency
    14.0 to 14.5 GHz
  • Power
    41.5 to 42 dBm
  • Power(W)
    14.13 to 15.85 W
  • P1dB
    41.5 to 42 dBm
  • Power Gain (Gp)
    5 to 6 dB
  • Power Added Effeciency
    0.26
  • Supply Voltage
    10 V
  • Voltage - Gate-Source (Vgs)
    -5 V
  • Drain Current
    4200 to 5000 mA
  • IMD
    -45 to -42 dBc
  • Impedance Zs
    50 Ohms
  • Thermal Resistance
    1.8 to 2 Degree C/W
  • Package Type
    Flanged
  • Storage Temperature
    -65 to 175 Degree C
  • Note
    Saturated Drain Current : 7200 to 1000 mA, Pinch-off Voltage : -3 to -0.5 V, Gain Flatness : 1.2 dB, Channel Temperature Rise : 80 Degree C, Forward Gate Current : 48 mA, Channel Temperature : 175 Degree C

Technical Documents
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