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FLX107MH-12

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The FLX107MH-12 from Sumitomo Electric Device Innovations is a RF Transistor with Frequency 12.5 GHz, Power 29 to 30 dBm, Power(W) 0.79 to 1 W, P1dB 29 to 30 dBm, Power Gain (Gp) 6.5 to 7.5 dB. Tags: Flanged. More details for FLX107MH-12 can be seen below.

Product Specifications

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Product Details

  • Part Number
    FLX107MH-12
  • Manufacturer
    Sumitomo Electric Device Innovations
  • Description
    GaAs FET from 12.5 GHz

General Parameters

  • Transistor Type
    FET
  • Technology
    GaAs
  • Application Type
    X-Band, Ku-Band, General Purpose
  • Application
    X Band, Ku Band, General Purpose
  • Frequency
    12.5 GHz
  • Power
    29 to 30 dBm
  • Power(W)
    0.79 to 1 W
  • P1dB
    29 to 30 dBm
  • Power Gain (Gp)
    6.5 to 7.5 dB
  • Power Added Effeciency
    0.33
  • Voltage - Gate-Source (Vgs)
    -5 V
  • Drain Current
    400 to 600 mA
  • Thermal Resistance
    15 to 20 Degree C/W
  • Package Type
    Flanged
  • Package
    MH
  • Storage Temperature
    -65 to 175 Degree C
  • Note
    Pinch Off Voltage : -3.5 to -1 V, Channel Temperature : 175 Degree C

Technical Documents
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