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FSU01LG

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The FSU01LG from Sumitomo Electric Device Innovations is a RF Transistor with Frequency 2 GHz, Power Gain (Gp) 19 dB, Noise Figure 0.5 dB, Supply Voltage 3 to 6 V, Voltage - Drain-Source (Vdss) 3 to 6 V. Tags: Flanged. More details for FSU01LG can be seen below.

Product Specifications

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Product Details

  • Part Number
    FSU01LG
  • Manufacturer
    Sumitomo Electric Device Innovations
  • Description
    GaAs FET from 2 GHz

General Parameters

  • Transistor Type
    FET
  • Technology
    GaAs
  • Frequency
    2 GHz
  • Power Gain (Gp)
    19 dB
  • Noise Figure
    0.5 dB
  • Supply Voltage
    3 to 6 V
  • Voltage - Drain-Source (Vdss)
    3 to 6 V
  • Drain Current
    10 to 40 mA
  • Thermal Resistance
    18.5 Degree C/W
  • Package Type
    Flanged
  • Note
    Reverse Gate Current : -2.2 mA
View details on the manufacturer's website
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