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FSX017X

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The FSX017X from Sumitomo Electric Device Innovations is a RF Transistor with Frequency 8 GHz, Power 20.5 to 21.5 dBm, Power(W) 0.11 to 0.14 W, P1dB 20.5 to 21.5 dBm, Power Gain (Gp) 7.5 to 15 dB. Tags: Chip. More details for FSX017X can be seen below.

Product Specifications

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Product Details

  • Part Number
    FSX017X
  • Manufacturer
    Sumitomo Electric Device Innovations
  • Description
    GaAs FET from 8 GHz

General Parameters

  • Transistor Type
    FET
  • Technology
    GaAs
  • Application Type
    X-Band, General Purpose
  • Application
    X Band, General Purpose
  • Frequency
    8 GHz
  • Power
    20.5 to 21.5 dBm
  • Power(W)
    0.11 to 0.14 W
  • P1dB
    20.5 to 21.5 dBm
  • Power Gain (Gp)
    7.5 to 15 dB
  • Noise Figure
    2.5 dB
  • Voltage - Gate-Source (Vgs)
    -5 V
  • Drain Current
    35 to 75 mA
  • Thermal Resistance
    120 to 150 Degree C
  • Package Type
    Chip
  • RoHS
    Yes
  • Storage Temperature
    -65 to 175 Degree C
  • Note
    Pinch Off Voltage : -1.7 to -0.7 V, Channel Temperature : 175 Degree C

Technical Documents
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