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FSX027X

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The FSX027X from Sumitomo Electric Device Innovations is a RF Transistor with Frequency 8 GHz, Power 23.5 to 24.5 dBm, Power(W) 0.22 to 0.28 W, P1dB 23.5 to 24.5 dBm, Power Gain (Gp) 6.5 to 14 dB. Tags: Chip. More details for FSX027X can be seen below.

Product Specifications

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Product Details

  • Part Number
    FSX027X
  • Manufacturer
    Sumitomo Electric Device Innovations
  • Description
    GaAs FET from 8 GHz

General Parameters

  • Transistor Type
    FET
  • Technology
    GaAs
  • Application Type
    X-Band, General Purpose
  • Application
    X Band, General Purpose
  • Frequency
    8 GHz
  • Power
    23.5 to 24.5 dBm
  • Power(W)
    0.22 to 0.28 W
  • P1dB
    23.5 to 24.5 dBm
  • Power Gain (Gp)
    6.5 to 14 dB
  • Noise Figure
    2.5 dB
  • Voltage - Gate-Source (Vgs)
    -5 V
  • Drain Current
    70 to 150 mA
  • Thermal Resistance
    70 to 100 Degree C
  • Package Type
    Chip
  • RoHS
    Yes
  • Storage Temperature
    -65 to 175 Degree C
  • Note
    Pinch Off Voltage : -1.7 to -0.7 V, Channel Temperature : 175 Degree C

Technical Documents
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