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SGFCF20S-D

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SGFCF20S-D Image

The SGFCF20S-D from Sumitomo Electric Device Innovations is a RF Transistor with Frequency DC to 3.7 GHz, Power 41 dBm, Power(W) 12.59 W, Saturated Power 43 to 44 dBm, Power Gain (Gp) 18 to 19 dB. Tags: Surface Mount. More details for SGFCF20S-D can be seen below.

Product Specifications

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Product Details

  • Part Number
    SGFCF20S-D
  • Manufacturer
    Sumitomo Electric Device Innovations
  • Description
    GaN on SiC, GaN HEMT from DC to 3.7 GHz

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC, GaN
  • Application Industry
    Cellular, Wireless Infrastructure, Wireless Communication
  • Application Type
    Base Station, 4G / LTE, WiMax, 3G / WCDMA
  • Application
    Base Station, 4G / LTE, WiMax, 3G / WCDMA
  • Frequency
    DC to 3.7 GHz
  • Power
    41 dBm
  • Power(W)
    12.59 W
  • Saturated Power
    43 to 44 dBm
  • Power Gain (Gp)
    18 to 19 dB
  • Supply Voltage
    50 V
  • Voltage - Drain-Source (Vdss)
    50 V
  • Voltage - Gate-Source (Vgs)
    -15 V
  • Power Dissipation (Pdiss)
    19.4 W
  • Thermal Resistance
    7 to 8 Degree C/W
  • Package Type
    Surface Mount
  • RoHS
    Yes
  • Storage Temperature
    -40 to 125 Degree C
  • Note
    Forward Gate Current : 46 mA, Reverse Gate Current : -0.7 mA

Technical Documents
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