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SGK1314-25A

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The SGK1314-25A from Sumitomo Electric Device Innovations is a RF Transistor with Frequency 13.75 to 14.5 GHz, Power 43 to 44 dBm, Power(W) 19.95 to 25.12 W, Gain 7 to 8 dB, Power Added Effeciency 0.29. Tags: Flanged. More details for SGK1314-25A can be seen below.

Product Specifications

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Product Details

  • Part Number
    SGK1314-25A
  • Manufacturer
    Sumitomo Electric Device Innovations
  • Description
    GaN on SiC, GaN HEMT from 13.75 to 14.5 GHz

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC, GaN
  • Application Industry
    SATCOM, Communication, Wireless Infrastructure, Broadcast
  • Application Type
    Ku-Band, Communication
  • Application
    Ku Band, Radio, Satellite
  • CW/Pulse
    CW
  • Frequency
    13.75 to 14.5 GHz
  • Power
    43 to 44 dBm
  • Power(W)
    19.95 to 25.12 W
  • Gain
    7 to 8 dB
  • Power Added Effeciency
    0.29
  • Transconductance
    2.6 S
  • Supply Voltage
    24 V
  • Voltage - Drain-Source (Vdss)
    24 V
  • Voltage - Gate-Source (Vgs)
    -10 V
  • Drain Current
    2.5 to 3 A
  • Power Dissipation (Pdiss)
    94 W
  • IMD
    -25 dBc
  • Impedance Zs
    50 Ohms
  • Thermal Resistance
    1.8 to 2.4 Degree C/W
  • Package Type
    Flanged
  • RoHS
    Yes
  • Storage Temperature
    -55 to 125 Degree C
  • Note
    Saturated Drain Current : 5.5 A, Gain Flatness : 1.6 dB, Forward Gate Current : 8.8 mA, Reverse Gate Current : -2.7 mA

Technical Documents
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