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SGK5867-60A

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The SGK5867-60A from Sumitomo Electric Device Innovations is a RF Transistor with Frequency 5.85 to 6.75 GHz, Power 47 to 48 dBm, Power(W) 50.12 to 63.1 W, Gain 11.5 to 12.5 dB, Power Added Effeciency 0.4. Tags: Flanged. More details for SGK5867-60A can be seen below.

Product Specifications

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Product Details

  • Part Number
    SGK5867-60A
  • Manufacturer
    Sumitomo Electric Device Innovations
  • Description
    GaN on SiC, GaN HEMT from 5.85 to 6.75 GHz

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC, GaN
  • Application Industry
    Communication, Wireless Infrastructure
  • Application Type
    C-Band, Communication
  • Application
    C Band, Communication System
  • CW/Pulse
    CW
  • Frequency
    5.85 to 6.75 GHz
  • Power
    47 to 48 dBm
  • Power(W)
    50.12 to 63.1 W
  • Gain
    11.5 to 12.5 dB
  • Power Added Effeciency
    0.4
  • Transconductance
    6 S
  • Supply Voltage
    24 V
  • Voltage - Drain-Source (Vdss)
    24 V
  • Voltage - Gate-Source (Vgs)
    -10 V
  • Drain Current
    5.4 to 7 A
  • Power Dissipation (Pdiss)
    112 W
  • IMD
    -40 dBc
  • Impedance Zs
    50 Ohms
  • Thermal Resistance
    1.3 to 1.5 Degree C/W
  • Package Type
    Flanged
  • RoHS
    Yes
  • Operating Temperature
    -40 to 125 Degree C
  • Storage Temperature
    -55 to 125 Degree C
  • Note
    Saturated Drain Current : 13 A, Gain Flatness : 1.6 dB, Forward Gate Current : 12.2 mA, Reverse Gate Current : -6.4 mA

Technical Documents
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