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SGN3035-150H-R

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SGN3035-150H-R Image

The SGN3035-150H-R from Sumitomo Electric Device Innovations is a RF Transistor with Frequency 3 to 3.5 GHz, Power 51.8 to 52.8 dBm, Power(W) 151.36 to 190.55 W, Duty_Cycle 10 to 25%, Power Gain (Gp) 12.8 to 13.8 dB. Tags: Flanged. More details for SGN3035-150H-R can be seen below.

Product Specifications

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Product Details

  • Part Number
    SGN3035-150H-R
  • Manufacturer
    Sumitomo Electric Device Innovations
  • Description
    GaN on SiC, GaN HEMT from 3 to 3.5 GHz

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC, GaN
  • Application Industry
    Radar, Wireless Infrastructure
  • Application Type
    S Band, Band
  • Application
    Radar
  • CW/Pulse
    Pulse
  • Frequency
    3 to 3.5 GHz
  • Power
    51.8 to 52.8 dBm
  • Power(W)
    151.36 to 190.55 W
  • Pulsed Width
    1000 to 5000 usec
  • Duty_Cycle
    10 to 25%
  • Power Gain (Gp)
    12.8 to 13.8 dB
  • VSWR
    10.00:1
  • Supply Voltage
    50 V
  • Voltage - Drain-Source (Vdss)
    50 V
  • Voltage - Gate-Source (Vgs)
    -15 V
  • Drain Efficiency
    0.62
  • Impedance Zs
    50 Ohms
  • Thermal Resistance
    1.1 to 1.3 Degree C/W
  • Package Type
    Flanged
  • RoHS
    Yes
  • Storage Temperature
    -55 to 125 Degree C
  • Note
    Gain Flatness : 1.3 dB, Forward Gate Current : 122 mA, Reverse Gate Current : -5.2 mA

Technical Documents
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