SGN3135-500H-R

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SGN3135-500H-R Image

The SGN3135-500H-R from Sumitomo is a GaN-HEMT that operates from 3.1 to 3.5 GHz for Radar applications. It delivers an output power of more than 480 watts and a power gain of over 10.8 dB with a pulse width of up to 200µsec pulse width and duty of up to 10%. This device provides high efficiency and requires a 50 V supply. It is available in a metal ceramic hermetic package and is ideal for S-band radar applications.

Product Specifications

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Product Details

  • Part Number
    SGN3135-500H-R
  • Manufacturer
    Sumitomo Electric Device Innovations
  • Description
    GaN on SiC, GaN HEMT from 3.1 to 3.5 GHz

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC, GaN
  • Application Industry
    Radar, Wireless Infrastructure
  • Application Type
    S Band, Radar
  • Application
    S Band, Radar
  • CW/Pulse
    Pulse
  • Frequency
    3.1 to 3.5 GHz
  • Power
    56.81 to 57.56 dBm
  • Power(W)
    480 to 570 W
  • Pulsed Width
    200 usec
  • Duty_Cycle
    10 %
  • Power Gain (Gp)
    10.8 to 11.6 dB
  • Supply Voltage
    50 V
  • Drain Efficiency
    0.58
  • Impedance Zl
    50 Ohms
  • Impedance Zs
    50 Ohms
  • Package Type
    Flanged
  • RoHS
    Yes
  • Storage Temperature
    -55 to 125 Degree C

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