1. everything RF
  2. RF Components
  3. Transistors
  4. Transistors
  5. Sumitomo Electric Device Innovations
  6. SGNE030MK

SGNE030MK

Download Datasheet Request Quote

Note : Your request will be directed to Sumitomo Electric Device Innovations.

SGNE030MK Image

The SGNE030MK from Sumitomo Electric Device Innovations is a RF Transistor with Frequency 2.7 GHz, Power 45.5 to 46.5 dBm, Power(W) 35.48 to 44.66 W, Saturated Power 45.5 to 46.5 dBm, Gain 15 to 16 dB. Tags: Flanged. More details for SGNE030MK can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    SGNE030MK
  • Manufacturer
    Sumitomo Electric Device Innovations
  • Description
    GaN on SiC, GaN HEMT from 2.7 GHz

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC, GaN
  • Application Type
    L-Band, General Purpose
  • Application
    L Band, General Purpose
  • CW/Pulse
    CW
  • Frequency
    2.7 GHz
  • Power
    45.5 to 46.5 dBm
  • Power(W)
    35.48 to 44.66 W
  • Saturated Power
    45.5 to 46.5 dBm
  • Gain
    15 to 16 dB
  • Power Added Effeciency
    0.55
  • Supply Voltage
    50 V
  • Voltage - Drain-Source (Vdss)
    50 V
  • Voltage - Gate-Source (Vgs)
    -15 V
  • Power Dissipation (Pdiss)
    93.75 W
  • Thermal Resistance
    2 to 2.4 Degree C/W
  • Package Type
    Flanged
  • RoHS
    Yes
  • Storage Temperature
    -65 to 175 Degree C
  • Note
    Forward Gate Current : 39 mA, Reverse Gate Current : -2.2 mA

Technical Documents
View details on the manufacturer's website
View similar products