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SGNE090MK

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The SGNE090MK from Sumitomo Electric Device Innovations is a RF Transistor with Frequency 900 MHz, Power 551 dBm, Power(W) 100 to 125.89 W, Saturated Power 50 to 51 dBm, Gain 18 to 20 dB. Tags: Flanged. More details for SGNE090MK can be seen below.

Product Specifications

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Product Details

  • Part Number
    SGNE090MK
  • Manufacturer
    Sumitomo Electric Device Innovations
  • Description
    GaN on SiC, GaN HEMT from 900 MHz

General Parameters

  • Transistor Type
    HEMT
  • Technology
    GaN on SiC, GaN
  • Application Type
    L-Band, General Purpose
  • Application
    L Band, General Purpose
  • CW/Pulse
    CW
  • Frequency
    900 MHz
  • Power
    551 dBm
  • Power(W)
    100 to 125.89 W
  • Saturated Power
    50 to 51 dBm
  • Gain
    18 to 20 dB
  • Power Added Effeciency
    0.7
  • Supply Voltage
    50 V
  • Voltage - Drain-Source (Vdss)
    50 V
  • Voltage - Gate-Source (Vgs)
    -15 V
  • Power Dissipation (Pdiss)
    150 W
  • Thermal Resistance
    1.2 to 1.5 Degree C/W
  • Package Type
    Flanged
  • RoHS
    Yes
  • Storage Temperature
    -65 to 175 Degree C
  • Note
    Forward Gate Current : 125 mA, Reverse Gate Current : -7.2 mA

Technical Documents
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