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EC2612-99F

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The EC2612-99F from United Monolithic Semiconductors is a RF Transistor with Frequency DC to 40 GHz, Power 24.47 dBm, Power(W) 0.28 W, Gain 8 to 14 dB, Noise Figure 1.5 to 1.9 dB. Tags: Die, Chip. More details for EC2612-99F can be seen below.

Product Specifications

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Product Details

  • Part Number
    EC2612-99F
  • Manufacturer
    United Monolithic Semiconductors
  • Description
    DC to 40 GHz Low Noise GaN on SiC pHEMT

General Parameters

  • Transistor Type
    pHEMT
  • Technology
    GaN on SiC, GaAs, GaN
  • Application Industry
    Radar, Wireless Infrastructure
  • Application
    Radar
  • CW/Pulse
    CW
  • Frequency
    DC to 40 GHz
  • Power
    24.47 dBm
  • Power(W)
    0.28 W
  • Gain
    8 to 14 dB
  • Noise Figure
    1.5 to 1.9 dB
  • Transconductance
    50 to 70 mS
  • Supply Voltage
    3 V
  • Breakdown Voltage - Drain-Source
    3.5 V
  • Voltage - Gate-Source (Vgs)
    -2.5 V
  • Gate Leakage Current (Ig)
    0.005 mA
  • Package Type
    Die, Chip
  • RoHS
    Yes
  • Operating Temperature
    175 Degree C
  • Storage Temperature
    -55 to 175 Degree C
  • Note
    Pich Off Voltage : -1 to -0.3 V, Saturated Drain Current : 10 to 60 mA

Technical Documents
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