The WP481P06200MH from WAVEPIA is a GaN High Electron Mobility Transistor (HEMT) that operates from 1.03 to 1.09 GHz. It delivers a saturated output power of 54.53 dBm (~283 W) with a gain of 17.53 dB and has a drain efficiency of 62.76%. The transistor requires a DC supply of 48 V. It is available in a surface-mount or screw-hole package and is suitable for use in broadband amplifiers, cellular infrastructure, test instrumentation, and radar applications.
