BGS18MA12

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BGS18MA12 Image

The BGS18MA12 from Infineon is an SP8T Switch that operates from 0.1 to 6 GHz. It can handle an input power of 3 W, has an insertion loss of less than 1.8 dB, and provides more than 12 dB of isolation. This switch is based on Infineon’s proprietary technology and has an on-chip MIPI RFFE 2.0 controller that is fully compatible with industrial standards. It has a switching time of 3 μs, an RF rise time of less than 2 μs, and a power-up settling time of 10 μs. The switch requires a DC supply of 1.8 V, consumes less than 125 μA of current during normal operation, and 2 μA of current in idle mode. It does not require any decoupling capacitors if no DC voltage is applied on RF lines. This switch is available in a package that measures 1.1 x 1.9 x 0.6 mm and is suitable for use in LTE (Band 42/43), 5G, and LAA applications.

Product Specifications

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Product Details

  • Part Number
    BGS18MA12
  • Manufacturer
    Infineon Technologies
  • Description
    SP8T Switch from 0.1 to 6 GHz for LTE/5G Applications

General Parameters

  • Type
    Solid State
  • Configuration
    SP8T
  • Application
    5G, 4G/LTE
  • Application Industry
    Wireless Communication, Cellular
  • Frequency
    0.1 to 6 GHz
  • Insertion Loss
    0.35 to 1.8 dB
  • Isolation
    12 to 47 dB
  • Power
    35 dBm
  • Power
    3.16 W
  • Supply Voltage
    0 to 2.1 V
  • Supply Current
    2 to 125 uA
  • Impedance
    50 Ohms
  • Package Type
    Surface Mount
  • Storage Temperature
    -55 to 150 Degree C
  • Grade
    Commercial
  • RoHS
    Yes

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