CLL3H0914L(S)-700: GaN-on-SiC HEMT, 50 V, 0.45 um Process 700 W, L-Band Transistor

The CLL3H0914L(S)-700 transistor is a 50 V, 0.45 um process, configured on a thermally enhanced package in either bold-down or solder-down package styles. This transistor has been specifically engineered for high-power performance while operating under long-pulse signals, all the while maintaining a reliable channel temperature under 225 °C. The long-pulse capability supports a 2 ms pulse width at 20 % duty and can approach CW performance depending on case temperature. Further, the transistor has a number of reference designs to suit various applications: avionics bands from 960 to 1250 MHz and 1030 to 1090 MHz, as well as L-band radar from 1200 to 1400 MHz.