RFHIC Demos latest 80W, Band 2 GaN SiC Transistor Solutions with Maxlinear DPD Solutions

Check out the latest demonstration of RFHIC’s Band 2 (1930 – 1995 MHz), 80 Watt GaN-on-SiC transistor solution, held in IMS 2024!

For this demonstration, RFHIC designed an integrated turn-key EVB that provides a 50-ohm matched, two-stage driver and a main-stage GaN-on-SiC transistor, complete with a circulator at the output end.

This design offers the perfect power amplifier solution tailored for 5G microcell applications including Open RaN O-Rus.