Understanding Base Biasing Influence on the Large Signal Behavior in HBTs
High Frequency Electronics, Modelithics, Inc.
- Author:
Byoungyong Lee and Larry Dunleavy
Large-signal behav-ior of HBT devices can depend strong-ly on the type of source used to bias the base of the devices. Understand-ing of this behavior is advanced using sample device measurements and model simulations. The device used is a wafer-level InGaP/GaAs HBT represented with a modified Gummel-Poon non-linear model. Results show that the use of constant voltage source allowed for a higher power gain compression as compared to constant current-source use. Once properly setup, simulations with the extracted non-lin-ear model accurately predict power compres-sion behavior for either base source type.
Please note:
By downloading a white paper, the details of your profile might be shared with the creator of the content and you may be contacted by them directly.