Making the most of Ka GaN
One of the benefits of GaN is that its larger device voltage and resulting higher output impedance mean it is easier to match for maximum power over a wider frequency range. Ka-band GaN chips are now commercially available with up to 9W saturated output power from 27.5 to 31 GHz.
GaN FETs offer significant benefits over their GaAs based counterparts. Higher efficiency, wider bandwidth, improved reliability and higher output powers are just some of their features. Now GaN PA MMICs are available at Ka-band. What are BUC vendors doing to make the most of this exciting new development?
This paper outlines some of the technology changes that EM Solutions is developing in order to harness the power of GaN.
Please note:
By downloading a white paper, the details of your profile might be shared with the creator of the content and you may be contacted by them directly.
