ESD Considerations for SOI Switch Design
- Author:
Yuh-Yue Chen, Tzung-Yin Lee, Ed Lawrence, and Jeffrey Woods
This paper proposes a solution that employs transistor self-conduction and circuit design techniques to improve ESD performance for SOI RF switch applications. The primary limitations and challenges in the ESD design for SOI technology are discussed. The solution enables the switch to pass 8kV IEC as well as typical HBM standards.
Please note:
By downloading a white paper, the details of your profile might be shared with the creator of the content and you may be contacted by them directly.
