Passive Intermodulation and Power Handling for High Power RF MEMS Switches
- Author:
Ian Burke, Darryl Evans, Chris Keimel, Marten Seth, Xu Zhu
This paper describes the theory and demonstrates the feasibility of implementing a high power, low loss and high linearity RF switch on fused silica substrate through RF MEMS technology. Commercial two-tone intermodulation test shows IMD3 90~110dBm at 850 MHz and 90dBm at 3.6 GHz.
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