How GaN-on-Si Can Help Deliver Higher Efficiencies in Power Conversion and Power Management

This paper describes the benefits of gallium nitride on silicon (GaN-on-Si) technology in power designs. Key differences between silicon (Si), silicon carbide (SiC) and gallium nitride (GaN) technologies are discussed as well as features and benefits of Infineon’s CoolGaN™ HEMT's are exposed.

Please note: By downloading a white paper, the details of your profile might be shared with the creator of the content and you may be contacted by them directly.