Altum RF, a supplier of high-performance RF to millimeter-wave semiconductor solutions for next generation markets and applications, showcased its range of products in its virtual booth at the IMS 2020. Company leaders were also online to answer questions about specific products, future plans and their decades of expertise designing and delivering RF, microwave and millimeter-wave semiconductors.
New products featured in the booth include the ARF1307C7, a 1-20 GHz GaN distributed amplifier that delivers 10W of saturated output power, and the ARF1010Q4, a 20-30 GHz 1W amplifier for 5G millimeter-wave infrastructure and 24 GHz ISM applications. Products brochures, videos, online chat and live meetings can also be found and scheduled in the virtual booth.
ARF1307C7
The ARF1307C7 from Altum RF is a GaN distributed amplifier that operates from 2 to 20 GHz. The amplifier provides 20 dB of small signal gain, 10 W of saturated output power with 14 dB of power gain and 25% power added efficiency. It is available in an RoHS-compliant 7 x 7 mm ceramic QFN package and is suitable for higher performance commercial and defense-related applications, such as test & measurement equipment, EW, and commercial or defense radar systems.
ARF1010Q4
The ARF1010Q4 is a linear amplifier designed for high data-rate applications between 24 and 30 GHz. With 28 dB of linear gain, and 38 dBm OIP3 at POUT = 20 dBm, it is well suited to demanding, high-order modulation schemes such as millimeter-wave 5G. The circuit draws 600 mA from a 4 V DC supply with positive gate voltage. The part is internally matched to 50 Ω with ESD protection in a 4 x 4 mm QFN package.
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