Marki Microwave Introduces High Frequency MMIC Active Doubler/Amplifier from 10 to 25 GHz

Marki Microwave Introduces High Frequency MMIC Active Doubler/Amplifier from 10 to 25 GHz

Marki Microwave has introduced the IADA-2050CH, a high-frequency MMIC active doubler designed for advanced RF applications. Fabricated using Gallium Arsenide (GaAs) Schottky diodes, this device is intended for use in environments requiring precise signal manipulation and high-frequency synthesis. The IADA-2050CH operates effectively within an input frequency range of 10 to 25 GHz and doubles this input to deliver an output frequency spanning 20 to 50 GHz. The device requires an input power of +5 dBm and is capable of producing an output power of +18 dBm. Notably, it offers robust harmonic suppression, with 1F suppression at 24 dBc and 3F suppression at 21 dBc, making it suitable for precise frequency synthesis applications.

The device features several key ports that contribute to its functionality. The ground (GND) port provides grounding through the backside of the die, which must be connected to a DC/RF ground with high thermal and electrical conductivity. The RF input (RF In) pad is designed for the 10-25 GHz frequency range and is DC open, matched to 50 ohms. The RF output (RF Out) pad, responsible for delivering the signal, is also DC open and matched to 50 ohms, but for the 20-50 GHz range. For biasing, the device includes VDA and VDB ports, which supply positive bias to the input and output amplifiers with a required +5V for standard operation. Additionally, VG1A and VG1B ports handle the negative bias, set at -0.15V, for gate control of the input and output amplifiers.

The IADA-2050CH is designed to function within specific operating conditions to ensure optimal performance and longevity. It operates effectively within a temperature range of -40°C to 85°C, with an MTTF greater than 1 million hours. The device can be stored at temperatures ranging from -65°C to 125°C. The negative bias voltage must not exceed -1.5V, while the positive bias voltage should stay below 6V. The device is capable of handling up to 10 dBm of RF input power.

To ensure proper operation, the IADA-2050CH requires adherence to a specific power sequencing protocol. During turn-on, -0.15V should first be applied to the VG1A and VG1B ports, followed by the application of +5V to the VDA and VDB ports. Conversely, when turning off the device, the sequence should be reversed by first deactivating the VDA and VDB ports before shutting off the VG1A and VG1B ports. This sequence helps maintain the integrity and functionality of the device throughout its operation.

The IADA-2050CH die should be mounted directly onto a low-impedance ground plane using conductive epoxy, ensuring minimal electrical resistance and optimal thermal performance. Wire bonding is recommended using 0.025 mm pure gold wire, with a stage temperature of 150°C for thermosonic bonding. Due to the device's sensitivity to electrostatic discharge (ESD), it must be handled in a static-protected environment, and exposure to liquids should be avoided. 

The IADA-2050CH is a high-performance MMIC active doubler, offering robust specifications for RF applications requiring precise frequency synthesis and reliable signal integrity. The device's comprehensive technical specifications and careful handling recommendations ensure that it meets the demands of advanced RF system designs.

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Publisher: everything RF
Tags:-   MMICMultiplierGaAs