Toshiba Electronics Europe, has introduced a new RF single-pole, double-throw (SPDT) switch in a compact package, suitable for applications such as telecommunications base stations, industrial equipment, repeaters, consumer equipment, and transceivers.
This high-power RF SPDT switch, TCWA1225G, offers an input peak power of 46 dBm (@ 8dB PAR). This has been achieved by adopting Toshiba’s original CMOS process and optimising the internal switching circuitry. The CMOS process also reduces insertion loss to avoid lowering transmit power and receiver sensitivity. As a result, the insertion loss of the TCWA1225G is 0.6 dB (typ. @ 5GHz) – around 10% lower than competitive products. The switch has an operating voltage of 3.3V and the power consumption is just 50μA. The new device is capable of operating in ambient temperatures from -40ºC to +95ºC.
The TCWA1225G is housed in a tiny Wafer-level Chip Scale Package (WCSP) measuring just 1.9mm x 1.9mm – giving a footprint around 10% smaller than other devices. All important pads including RF terminals, power and control are placed on the periphery of the device to simplify PCB layout.
As part of the 5G rollout, telecommunications base stations have recently introduced Massive MIMO (Multiple Input, Multiple Output) and several TX/RX antennae to deliver ultra-high-speed and ultra-large-capacity radio communications services. Individual antennas are increasingly composed of complex signal transmission paths that need RF switching. This requires low insertion loss and high input power in a compact package so that antenna size is maintained or reduced.
About Toshiba Electronics Europe
Toshiba Electronics Europe, headquartered in Düsseldorf, Germany, provides a wide range of products to European consumers and businesses, including hard disk drives (HDDs) and semiconductor solutions for various industries such as automotive, industrial, IoT, telecoms, and consumer electronics. Their product portfolio includes power semiconductors, diodes, logic ICs, optical semiconductors, microcontrollers, and application-specific standard products (ASSPs). TEE also offers Toshiba’s SCiB™ battery cells and modules with lithium titanium oxide (LTO) for heavy-duty applications and Silicon Nitride (SiN) ceramic substrates used in power semiconductor modules for their heat dissipation properties. The company operates branch offices in France, Italy, Spain, Sweden, and the UK, providing marketing, sales, and logistics services.
Click here for more information on Toshiba's TCWA1225G.
