At IMS 2017, Ampleon has introduced a new series of LDMOS RF power transistors using its Gen9HV 50 V LDMOS process. These devices are the first to use Ampleon’s latest 50 V process that has been optimized for the development of cellular infrastructure products up to 1 GHz with increased efficiency and gain.
Operating over a wide frequency range (450 MHz to 960 MHz), they provide a flexible approach to handling multiple channels with a single amplifier. An example on display at IMS 2017 is using a Gen9HV transistor in a low cost compact power amplifier design covering 720 MHz to 960 MHz that offers excellent efficiency and linearity in addition to multi-band capability.
Single band operation brings more than 57% efficiency and 18 dB of gain with a compact and cost-effective single-transistor Doherty amplifier (with WCDMA and LTE signal at 634 MHz). Typical applications include use in 4G LTE and NB-IoT base stations and remote radio heads.
The portfolio of Gen9HV LDMOS devices includes:
- BLP9H10-30, compact, 6 x 10 mm 30 W driver
- BLC9H10XS-60P, 60 W push-pull driver or final stage
- BLC9H10XS-300P, 300 W push-pull final stage in a compact 20 mm long package
- BLC9H10XS-350A, 350 W asymmetric final stage in a compact 20 mm long package
- BLC9H10XS-600A, 600 W asymmetric final stage in a 31 mm long package
Capable of delivering up to 400 Watts from a compact 20 mm long package, the series is assembled in an air cavity package with an ultra-low Rth flange, named ACP3. This package family combines excellent thermal properties with a very attractive cost.
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