Wolfspeed has extended its family of 50 V transistors and introduced a 250 Watts, GaN high electron mobility transistor. The CGHV40180 has been created for the growing ultra-high frequency (UHF) radar market, in which defense, public safety and land mobile radio applications seek to upgrade performance and component lifecycle availability by implementing GaN RF power devices. The new UHF GaN RF device operates from 20 MHz to 1000 MHz and delivers greater power density and output power than competing Si LDMOS devices, enabling radar applications to benefit from greater range within the same design footprint.
The CGHV40180 is available in flange and pill package styles and designed to optimize performance for radar power amplifiers, as well as military communications applications from 20 – 1000 MHz. These additional applications include very-high frequency (VHF) and UHF public safety radios and UHF tactical radios. At 250 W typical output power, it delivers up to 67% more continuous wave (CW) power than traditional Si devices in the same size package, providing significantly more signal range for greater detection and discrimination capabilities that are critical to defense and public safety.
The CGHV40180 features the highest output power in its class with 270 W CW typical output power from 800 – 1,000 MHz. Additionally, the device offers low power consumption with 75 percent drain efficiency. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities, making the CGHV40180 ideal for linear and compressed amplifier circuits. For additional information, click here.
