At this years European Microwave Week (EuMW), Integra will showcase its newly released high power GaN-on-SiC transistor IGT5259CW25. The IGT5259CW25 is a fully-matched RF GaN on SiC power transistor that operates from 5 to 6 GHz. The transistor provides up to 25 watts of power and with a gain of 12 dB and an efficiency of 48% at CW conditions. It requires a 36 V drain bias voltage and requires a negative gate voltage and bias sequencing. It can be used in C-Band radars and for general purpose CW applications.
Negative gate voltage and bias sequencing are required when utilizing this transistor. This device comes in Integra’s new package PL44C2CPC. Assembled via chip and wire technology, utilizing gold metallization, this unit is housed in a metal-based package and sealed with a ceramic-epoxy lid.
Stop by booth # 308/309 in Madrid, Spain to chat with their sales representative, Trilight about their high power capabilities and the line of new high-power X-band devices to be released in 2019.
Click here to see everything RF's coverage of EuMW 2018.
