Qorvo has introduced a GaN power amplifier (QPA3070) that delivers a 50 percent increase in power for improved range, performance and multi-target tracking in S-band (2-4 GHz) phased array radars.
The Qorvo QPA3070 leapfrogs existing industry offerings, providing 150 watts of power for the 2.9-3.5 GHz frequency range with a power gain of 28 dB and power added efficiency (PAE) of 58 percent. These achievements have been made possible by using Qorvo’s ultra-reliable and highly efficient gallium nitride (GaN) on silicon carbide (GaN-on-SiC) process technology, which offers superior efficiency, power density, and affordability.
The PA delivers these features in a small and cost-effective surface-mount package. It enables engineers to design higher power radar solutions with significant size, weight, power, and cost (SWAP-C) improvements – and bring them to market faster. The QPA3070 PA is available now to qualified customers.
Key Specifications of the QPA3070 Power Amplifier:
| Frequency Range | 2.9 to 3.5 GHz |
| PSAT | 52 dBm |
| PAE | 58% |
| Power Gain | 28 dB |
| Package Size | 7 x 7 x 0.85 mm |
Qorvo offers the industry's largest, most innovative GaN-on-SiC portfolio to help customers realize superior efficiency and operational bandwidth. The company's GaN-on-SiC products deliver high power density, reduced size, excellent gain, high reliability, and process maturity. Qorvo is a leading supplier of RF products and compound semiconductor foundry services to defense primes and other global defense and aerospace customers. Qorvo is the only supplier to achieve a Manufacturing Readiness Level 10 (MRL 10) rating from the U.S. Department of Defense.
Click here to know more about the QPA3070 GaN Power Amplifier.
