Microchip Technology has announced a new 2.4 GHz 256-QAM RF high-power amplifier (SST12CP21) which offers ultra-low EVM and current consumption for 256-QAM and IEEE 802.11n systems. Its performance significantly extends the range of 802.11b/g/n WLAN and MIMO systems, while consuming extremely low current at a 256-QAM data rate. The SST12CP21 is also spectrum mask compliant up to 28 dBm for 802.11b/g communication.
The amplifier delivers high linear output power of up to 23 dBm at 1.75% dynamic EVM, with MCS9 HT40 MHz bandwidth modulation at 5V and 320 mA current consumption. Additionally, the SST12CP21 delivers 25 dBm linear power at 3% EVM with only 350 mA current consumption for 802.11g/n applications.
Microchip’s RF power amplifiers have a strong position in the WLAN market, due to their reliability combined with high-power efficiencies that are achieved by using InGaP/GaAs HBT. The SST12CP21 provides the same reliable operation over temperature, at an even lower EVM. In conjunction with its higher-efficiency operation of only 320 mA at 23 dBm at 1.75% EVM, and 350 mA at 25 dBm at 3% EVM, this new power amplifier extends the range of both 802.11n and ultra-high data rate, 256-QAM MIMO systems. It provides accurate output power control over temperature and 2-to-1 output mismatch and has a low operating current of 320 mA at 23 dBm and 350 mA at 25 dBm, which enables multichannel and higher data rate WLAN systems. This amplifier is matched to 50 ohms on-chip at the input and output, requiring fewer external components and saving on board space. It measures 3x3x0.55 mm and is available in 16-pin QFN package.