MACOM Technology announced a new GaN on SiC HEMT pulsed power transistor that operates from DC to 3.5 GHz. The MAGX-000035-015000 (Flanged) and MAGX-000035-01500S (Flangless) can provide an output power of 17 W with 15.5 dB of power gain and 63% efficiency. These high performance transistors are assembled using state of the art wafer fabrication processes that are able to provide high gain, efficiency, bandwidth, and ruggedness over multiple octave bandwidths for today’s demanding applications. They offer a versatile and high performance solution for pulsed, driver and power applications over a broad frequency range.
The devices are highly robust transistors with high voltage breakdowns and boast a mean time to failure (MTTF) of 600 years. The product is offered in both an enhanced flanged (Cu/W) and flangeless (Cu) ceramic package which provide excellent thermal performance. They can be used for civilian and military radar pulsed applications and are an ideal driver stage for higher power GaN L-Band and S-Band transistors for pulsed radar applications.
See the complete list of RF Transistor from MACOM.
