BeRex has launched a new family of power GaN FETs (Field Effect Transistors) that improve current efficiency while maintaining excellent gain and power performance. This makes them ideal for C, X, Ku and K Band amplifiers.
The new BCGxxx GaN FETs are available as bare-dies with a nominal gate length of 0.15 µm and gate widths of 480 µm to 1200 µm; providing an output power from 2 Watt to 8 Watt at frequencies up to 12 GHz. These devices are designed in the US and fabricated using state of the art metallization and SI3N4 passivation to assure the highest reliability suitable for commercial or military applications.
“The new BCGxxx family of GaN chips represents our on-going commitment to providing GaN products for some of the world’s most demanding commercial and military applications.” says Dr Alex Yoo PhD, President of BeRex Inc.
The BCGxxx GaN family includes the BCG002, BCG004 and BCG008 whose output power of 2, 4 and 8 Watt, respectively when biased at 28 V. The GaN chips are competitively priced. Samples are available on request.
