Mitsubishi Electric Corporation has introduced two new 13.75-14.5 GHz (Ku-band) 30W (45.3dBm) gallium-nitride high-electron-mobility transistors (GaN HEMTs) to the company's GaN HEMT lineup for satellite-communication (SATCOM) earth stations. The two products, one for multi-carrier communication and the other for single-carrier communication will support increased data-transmission capacity and smaller earth stations. Sales will begin on March 15. The communication method uses a single-frequency carrier signal. Voice, video, and data communication method that uses carrier signals of various frequencies.
Key features of MGFK45G3745A are as follows:
- It delivers low IMD33 with wide offset frequencies4 of up to 400MHz for large-capacity, high-speed satellite communication.
- The frequency difference between two-tone signals, used in IMD3 measurements.
- Third-order intermodulation distortion, a measure of amplifier distortion in the case of two-tone signals.
Ku-band satellite systems are increasingly being deployed for emergency communication during natural disasters and satellite newsgathering (SNG) by TV broadcasters in remote areas where cable networks do not exist. Meanwhile, in addition to the growing use of conventional single-carrier communication, multi-carrier communication is increasingly needed for fast, high-volume communication and to support the downsizing of mobile stations for purposes such as SNG. So far, Mitsubishi Electric has introduced five GaN HEMTs for multi-carrier and single-carrier SATCOM earth stations. The two new 30W GaN HEMTs will enable more flexible amplifier designs, including rated power levels and the use of GaN drivers. They also will support the downsizing of earth stations as well as faster, larger-capacity satellite communication.
Parameters of single-carrier communication products are given below in the table:
Model
| MGFK45G3745
| MGFK48G3745
| MGFK50G3745
| MGFG5H1503
|
Frequency
| 13.75-14.5 GHz
| 13.75-14.5 GHz
| 13.75-14.5 GHz
| 13.75-14.5 GHz
|
Saturated output power
| 45.3 dBm (30 W)
| 48.3 dBm (70 W)
| 50 dBm (100 W)
| 43 dBm (20 W)
|
Linear gain
| 9.5 dB
| 12 dB
| 10 dB
| 24 dB
|
Offset frequency @IMD3 = -25dBc
| Up to 5 MHz
| Up to 5 MHz
| Up to 5 MHz
| Up to 5 MHz
|
Parameters of multi-carrier communication products are given below in the table:
| Model | MGFK45G3745A
| MGFK48G3745A
| MGFK50G3745A
|
Frequency
| 13.75-14.5 GHz
| 13.75-14.5 GHz
| 13.75-14.5 GHz
|
Saturated output power
| 45.3 dBm (30 W)
| 48.3 dBm (70 W)
| 50 dBm (100 W)
|
Linear gain
| 9.5 dB
| 11 dB
| 10 dB
|
Offset frequency @IMD3 = -25dBc
| Up to 400 MHz
| Up to 400 MHz
| Up to 200 MHz
|
