Teledyne e2v HiRel Electronics, a leading provider of high-reliability semiconductor solutions, announced that it will be offering High Reliability qualified versions of California-based Integra Technologies, Inc. (Integra) new 100V Gallium Nitride on Silicon Carbide (GaN/SiC) power transistors. Integra’s newly announced 100 V RF GaN/SiC gives designers the ability to dramatically increase system power levels and functionality while simplifying system architectures with less power combining circuitry compared to the more commonplace 50 V and 65 V GaN technologies.
Teledyne will qualify Integra’s first 100 V product, the IGN1011S3600, which offers 3.6 kW at 1,030 and 1,090 MHz. It delivers a gain of over 19 dB and has an efficiency of up to 75%. These transistors are ideal for military and new space applications.
Key features of this power transistor
- GaN/SiC HEMT technology.
- Ideal for L-band Avionics IFF & SSR systems.
- Operation at 1030 and 1090 MHz.
- The output power of over 3600 W.
- Pre-matched input impedance.
- High efficiency of up to 75% during the RF pulse.
- 100 % RF Tested.
- RoHS and REACH Compliant.
“Our most demanding customers are requesting higher power density RF power devices,” said Brad Little, VP and General Manager of Teledyne e2v HiRel. “Adding additional screening and qualifications for the new devices will assure long operational life in even the harshest environments.”
Click here to learn more about IGN1011S3600.
