Qorvo has announced a new gallium arsenide (GaAs) pHEMT process technology that provides higher gain and optical bandwidth with lower power consumption than other industry standard semiconductor processes. The new TQPHT09 process is a 90 nm pHEMT process that will enable Qorvo's next-generation of optical products. This new process is ideal for high frequency, high performance amplifiers required for 100G+ linear applications.
The TQPHT09 process is the newest offering in the Company's well-established pHEMT process portfolio and is manufactured in Qorvo's GaAs fabrication facility in Richardson, Texas. It serves as the basis for several new optical modulator driver products including the TGA4960-SL, the quad-channel 100G modulator driver. This modulator is available in a CFP2 form factor for Metro and long haul applications, and is also well suited for upgrading the 100G linear dual-channel drivers for line card applications. It is optimized for high performance, low power dissipation and high channel-to-channel isolation, and is packaged in a 14.0 x 8.0 x 2.6 mm SMT module, the smallest footprint in the industry.
