Ampleon is showcasing its latest solutions and innovative products in GaN and LDMOS technologies at the European Microwave Week 2022 in Milan this week. Among the products on display are ones aimed at wireless infrastructure, avionics/defense, non-cellular communication, cooking/ defrosting, and ISM-related applications.
A key highlight for visitors at the Ampleon booth (#B36) was the new CLL3H0914L-700 GaN-SiC HEMT. This rugged GaN transistor is optimized for radar implementations where long pulse width and high-duty cycles are required. The transistor was engineered to achieve over 700 W of peak output power from a single transistor while operating at a voltage of 50 V with industry-leading efficiency of over 70% as well as designed thermally for long pulse applications, such as pulse widths (~2 milliseconds) and 20% duty cycles.
These L-Band GaN HEMT superior performance capabilities are demonstrated in a variety of application reference designs shown at the booth - including ones for defense/aerospace bands (960-1250 MHz and 1030-1090 MHz), plus an L-band ground base radar (1200-1400 MHz).
This high-power density and low-thermal resistance HEMT is now in full-volume production. Units are available directly from Ampleon or authorized distribution partners, RFMW and Digi-Key.
Click here to learn more about CLL3H0914L-700 GaN-SiC HEMT from Ampleon.
Click here to see everything RF's coverage of European Microwave Week.
