At the International Microwave Symposium in Phoenix, Arizona, Qorvo announced a new family of input-matched gallium nitride (GaN) transistors in a low-cost plastic package designed to enable cost effective commercial and military radar and radio communications systems. By expanding the portfolio of GaN transistors to include low-cost plastic packaging, Qorvo is providing customers with cost-effective, scalable GaN solutions that are also very power efficient.
The 5W TGF2965-SM, 5W TGF3020-SM and 10W TGF3015-SM input-matched transistors enable high linear gain and power efficiency in a low-cost, space-saving surface-mount plastic QFN package. The integrated input matching network enables wideband gain and power performance. The output can be matched on the board to optimize power and efficiency for any region within the band. The 30W TGF3021-SM also has the features of low-cost, space saving plastic packaging as well as providing continuous-wave capabilities for military communications applications. Qorvo's plastic packaged GaN HEMTs are sampling today.
