Richardson RFPD, an Arrow Electronics company, a global innovator in the RF and wireless communications, power conversion and renewable energy markets, has announced the availability and full design support capabilities for a new RF-power, gallium nitride (GaN) transistor from NXP Semiconductors.
The MMRF5018HSR5 is a 125-Watt, continuous wave, RF power transistor optimized for wideband operation up to 2700 MHz. It includes input matching for extended bandwidth performance.
Key Features of the New GaN Transistor
- High power density
- Decade bandwidth performance
- Enhanced thermal resistance packaging
- Power gain: 12.0 dB
- Drain efficiency: 64.4% (typical)
- High ruggedness: > 20:1 VSWR
With its wideband capabilities, high gain, ruggedness and drain efficiency, the MMRF5018HSR5 offers a complete solution for multiband communication applications. It is also versatile for a range of CW, pulse and wideband RF applications.
Other applications include narrowband and multi-octave wideband amplifier systems that are used in radars, jammers, and EMC testing, wideband laboratory amplifiers, ISM, and wireless cellular infrastructure.
An evaluation board is also provided with the GaN transistor during purchase. Click here to learn more about this new GaN transistor.
Click here to view other GaN transistors from the leading manufacturers on everything RF.
