Integrated Device Technology has introduced two new RF voltage variable attenuators (VVA) expanding the frequency coverage of their attenuator series from 1 MHz to 6 GHz. These silicon-based RF devices deliver up to 1,000X improvement in linearity over GaAs products.
The F2255 and F2258 deliver analog control for applications that require precise attenuation. They offer about half the insertion loss of competitive solutions, IP3 performance 1000x (30 dB) better than the competing Gallium arsenide (GaAs) device, and they exhibit a linear-in-dB attenuation characteristic across the voltage control range. Their low insertion loss reduces RF chain path loss, while their high linearity improves system data rates. By using silicon-based RF semiconductor technology, IDT’s attenuators offer a robust alternative to older GaAs-based semiconductor technology. Silicon technology offers the advantages of improved RF performance as well as more robust electrostatic discharge (ESD) protections, better moisture sensitivity levels (MSL), improved thermal performance, lower current consumption, and the proven reliability of silicon technology.
Comparing the F2258 to its pin-compatible GaAs competitor, the device has an Input IP3 of up to 65 dBm vs 35 dBm, a maximum attenuation slope of 33 dB/Volt vs. 53 dB/Volt; minimum return loss up to 6000 MHz, 12.5 dB vs. 7 dB; and operating maximum temperature range of 105 C Vs 85 C. The F2255 device supports a frequency range down to 1 MHz and has a maximum attenuation slope of 33 dB/Volt. Both devices have bi-directional RF ports, support a single positive supply voltage of either 3 V or 5 V and have an operating temperature range of -40 to 105 C.
These newest devices are available in a compact 3 mm x 3mm, 16-pin TQFN package. They are ideal for base stations (2G, 3G and 4G), microwave infrastructure, public safety, portable wireless communication/data equipment, test/ATE equipment, military systems, JTRS radios, and HF, VHF and UHF radios.
