MACOM, a designer and manufacturer of high-performance semiconductor products for the Telecommunications, Industrial and Defense and Datacenter industries, has announced the production release of its 140 nm Gallium Nitride (GaN)-on-Silicon Carbide (SiC) MMIC process. This high-performance process technology was transferred from the Air Force Research Laboratory (ARFL) to our Trusted US foundry in Lowell, Massachusetts.
MACOM’s team is excited to make this process available to their commercial and defense customers. The addition of this semiconductor technology to its portfolio confirms MACOM’s ongoing commitment to being a one-stop solution for high performance RF, microwave and millimeter wave systems. It also brings a 70+ year experience of excellence in product design, applications, and quality support to meet the power and linearity needs of the millimeter wave market.
Key Benefits of Utilizing MACOM’s GaN-on-SiC Process Technology
- High Power Density: 5.5 Watts/mm
- Drain efficiencies of better than 55% at 30 GHz
- High Linearity at low current consumption
- Bare die and packaged parts
- Atomic layer passivation for enhanced moisture ruggedness
- Custom development and collaborative design
MACOM’s GaN-on-SiC technology offers an advanced gate structure design in products with best-in-class FET characteristics and load-pull performance. The company uses the best and proven design tools, robust population testing, high mean time to failure, low fallout rates, and accurate failure criteria, all of which provide strongly supporting reasons to select MACOM to design robust and efficient GaN products.
MACOM is ready to offer standard products or custom design a GaN solution specifically for the customers’ needs.
Click here to learn more about MACOM's 140 nm GaN-on-SiC process.
Click here to learn more about MACOM's latest GaN products on everything RF.
