RF Micro Devices (RFMD), Inc. announced it will unveil a highly-integrated front end module (FEM) for Smart Energy/Advanced Metering Infrastructure (AMI) applications at the 2013 Consumer Electronics Show (CES) in Las Vegas. RFMD's single-chip RFFM6403 FEM delivers industry-leading performance, reduces customer design time and speeds customer time-to-market in Smart Energy/AMI applications operating in the 405MHz—475MHz frequency range, as well as for portable battery powered equipment and general 433/470MHz ISM band systems.
The feature-rich RFFM6403 integrates a transmit high power path with a +30.5dBm PA and Tx harmonic output filtering, a transmit bypass thru path with Tx harmonic output filtering, and a receive path with a low noise amplifier (LNA) with bypass mode. The FEM also features a low insertion loss/high isolation SP3T switch and separate Rx/Tx 50 ohm ports, simplifying matching and providing input and output signals for both the Tx and Rx paths.
The RFFM6403 is designed for AMI systems operating with high efficiency requirements and a minimum output power of 30 dBm. In the receive path, the Rx chain provides 16 dB of typical gain with only 5 mA of current and an excellent noise figure of 1.7 dB. The high level of integration and industry-leading form factor (6mm x 6mm x 1mm) minimize product footprint at the customer device while reducing external component count and associated assembly costs.
RFMD will showcase its broad portfolio of Smart Energy/AMI, ZigBee, and ISM band solutions from January 8 to January 11, at the 2013 Consumer Electronics Show in the ZigBee Alliance Pavilion, in South Hall 1, booth 20612, at the Las Vegas Convention Center. For more information please visit http://www.rfmd.com.
